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Abstract #1407

Gallium nitride MOSFETs enable transmit-receive switching in less than 100ns

Christoph Michael Schildknecht1, Markus Weiger1, Romain Froidevaux1, and Klaas Paul Pruessmann1
1Institute for Biomedical Engineering, ETH Zurich and University of Zurich, Zürich, Switzerland

For short-T2 MRI measurements, fast T/R switches that can handle high RF power are of paramount importance. In this work, we present a T/R switch based on GaN MOSFETs that switches in tens of nanoseconds and can handle a peak power of more than 1000W.

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Abstract