Abstract #0562

Characterizing the sensitivity of ihMT for various dipolar relaxation times (T1D) at high RF power using frequency-alternated and cosine-modulated RF pulses for dual frequency-offset saturation

Guillaume Duhamel^1,2, Samira Mchinda^1,2, Valentin H. Prevost^1,2, Victor Carvalho^1,2, Gopal Varma³, David Alsop³, and Olivier M. Girard^1,2

¹Aix-Marseille Univ, CNRS, CRMBM, Marseille, France, ²APHM, Hôpital Universitaire Timone, CEMEREM, Marseille, France, ³Radiology, Division of MR Research, Beth Israel Deaconess Medical Center, Harvard Medical Schooll, Boston, MA, United States

In the present study, we used both numerical simulations and experiments performed in a preclinical setup to characterize the mechanisms of the ihMT boost effect (signal enhancement achieved using concentrated bursts of high-power RF for saturation). We demonstrated that the ihMT boost effect depends on T_1Dand is more intense in short-T_1D components. This feature allowed, using various strategies for dual frequency-offset RF saturation, different ihMT contrasts to be produced and revealed strong ihMT signal outside the brain.

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