Abstract #2723

Noise Figure and Gain Comparison of GaAs and SiGe Semiconductors at High B0 Field Strength

Russell Lagore¹, Al-Karim A. Damji¹, Alan H. Wilman¹, Nicola De Zanche²

¹Biomedical Engineering, University of Alberta, Edmonton, Alberta, Canada; ²Department of Oncology, University of Alberta, Edmonton, Alberta, Canada

Gallium Arsenide (GaAs) and Silicon Germanium (SiGe) semiconductor devices behave differently in terms of gain and noise figure as B₀ field strength increases and orientation varies. SiGe devices are essentially immune to B₀ field variation while the more common GaAs devices are highly sensitive.