Abstract #0922
High-Power T/R Switches with 350 ns Rise Time for Zero Echo Time Imaging
David Otto Brunner 1 , Markus Weiger 1 , Thomas Schmid 1 , and Klaas Paul Pruessmann 1
1
Institute for Biomedical Engineering,
University and ETH Zurich, Zurich, Switzerland
TR switches with very short transients have become
crucial for the application of high bandwidth,
ultra-short T
2
*
imaging
techniques such as UTE, SWIFT or ZTE. However, to
speed-up the switching of inherently slow PIN diodes
comparably high reverse voltages and switching currents
have to be applied. This in turn can produce so high
spikes on the RF lines that the preamplifier shows
significant recovery transients. In this work we show a
novel TR switch topology based on a double balanced
biasing scheme which allows inherently decoupling the RF
lines and the biasing signals and removing all major
choke inductances from the bias lines.
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